Maximum sample size (Small board) - 15mm x15mm
最大样品尺寸:15mm x15mm (可定制)

Measurement Temperature: 300K (room temperature, optional77K,)
测试温度: 300K (常温，可选低温77K)

Measurement Material: Semiconductors material such as 
Si, SiGe, SiC,GaAs, InGaAs, InP, GaN, ITO (N Type & P Type) 
测试材质:半导体类材质、如：
Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN, ITO等所有半导体薄膜(P型和N型)

Magnet Flux Density: 0.68 Tesla nominal ±1% of marked value
磁场强度: 0.68 Tesla ±1%

Magbnet Stability: ±2% over 1 years
稳定性: ±2% （一年后）

Uniformity: ± 1% over 20mm diameter from center
均匀度：± 1%(20mm直径圆范围内)

Pole Gap: 20 mm
磁极间隙：20毫米

Hall voltage range: 10μV to 2000mV
霍尔电压范围：10μV ~2000mV

Resistivity (Ohm.cm): 10-5 to 107
电阻率 (Ω.㎝): 10-5 to 107

Mobility (cm2/Volt.sec): 1 ~ 107
迁移率(cm2/Volt.sec): 1 ~ 107

Carrier Density (cm-3): 107 ~ 1021
载流子浓度(cm-3): 107 ~ 1021