RF atomic oxygen source

• 详细介绍
• 详细参数

• 详细介绍

  The HD series builds on Oxford Applied Research's extensive experience in providing radio frequency atomic sources to the scientific community. The latest series of models produces neutral beams with extremely high atomic flux and zero ion content. Atoms have only thermal energy, but are highly reactive. This ensures rapid growth of extremely high-quality materials without the point defects associated with ion beam processing. Our sources are further designed to be multifunctional, allowing the user to easily change between different gases and flow states.

  
  

  Application field

  Oxford Applied Research's RF atomic sources are widely used in research and fully automated production applications for a variety of thin film processes. The thermal properties of the reactive beam ensure fast transfer of atomic species

  to the substrate without the detrimental consequences of high-energy processes. This makes the source ideal for growing high-quality nitrides and oxides, as well as for low-damage cleaning using atomic hydrogen

  clean. These sources have achieved great success in applications such as GaInNAs, GaN, ZnO, ultrathin Al, dielectric oxides, O thin films, and high-k thin films.

  
  

  Principle of Operation

  In an RF atomic source, a gas, such as nitrogen, is introduced into an all-ceramic cavity (discharge area). Plasma is induced in the discharge region by applying inductively coupled RF excitation. Plasma will feed gas

  The bulk is broken down into ions and neutral reactive atoms, which enter the process chamber through a porous plasma confinement plate. Charged particles are retained in the plasma. These sources include efficient water cooling to ensure minimal contamination during operation. They also feature the magnetic confinement of the plasma for improved pyrolysis efficiency, and a super-efficient matching network that shows almost zero power loss at maximum operating power.

  
  

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• 产品特色

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• 详细介绍

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