Silicon carbide power device dynamic characteristic test system

• 详细介绍
• 详细参数

• 详细介绍

  We are specialized in testing equipment for power components, and mainly dedicated to testing equipment for silicon carbide devices. Our advantage lies in the in-depth application of theory to practice. The combination of technical ability and practical ability can launch high-tech products on the market that are easy to use and accurate in test results. Our engineers have more than 20 years of professional design and test evaluation experience in high-power semiconductors. If you have any needs, please feel free to contact us. Various electronic testing needs.

  
  

  Comprehensive test plan:

  Double pulse test

  · For silicon carbide diodes

  · Testing with FETs

  High voltage device

  ·1.2 kV-1.7 kV-3.3 kV-4.5 kV

  · And higher

  Power devices (including modules)

  · The voltage can be adjusted to: 50 A (> 500 A)

  Clear switching waveform

  · Very low and very easy to judge parasitic phenomena

  Precise

  · Includes analysis and compensation procedures

  Designed for molds, compact packaging, modular components

  · Bare chip, TO220, TO247, TO254, any silicon carbide module

  Modular and forward-looking

  · New packaging and modular tunable switch plug

  High temperature test

  · DUT integrated heater-tunable to 250°C

  fast

  · Fast deployment, short test cycle

  Standards and specific applications

  · Integrated or customized gate driver; parasitic phenomenon can be tuned

  High performance system

  · Industrial grade design and manufacturing

  Safety

  · IEC61010 safety standard design

• 详细参数

  Technical specifications

  The dynamic characteristics are mainly aimed at the characteristics of power devices in silicon carbide technology, and are also applied to the characteristics of various instruments and equipment in silicon carbide technology. The dynamic performance test of semiconductor power devices based on silicon carbide technology is our core technology. With the rapid development of silicon carbide test equipment, testing requirements for bandwidth and parasitic components are required. For example, parasitic components such as load sensors and direct current will become the best solution for silicon carbide power devices.

  Function: Describe the dynamic behavior of SiC discrete variables

  Configuration: Diode mosfet (or IGBTs) configured on the phase leg

  Equipment level: optimized rated voltage 600V to 4500V      Optimized rated current from 10A to 50A

  Packing: device that can interface with TO220, TO247, TO254 packages

  The system accepts fixtures from other packages

  Input voltage: 230Vac, 50Hz, single-phase grounding protection

  Input current: 8A

  Fuse rating: 10A, T, 250V

  DC voltage range: 100V to 4500V

  Switching current range: 10A to 50A

  DUT temperature: The temperature of the hot plate can be adjusted to 200°C

• 产品特色

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• 详细介绍

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  AutoCal系统-Dynalog的先进水平校准技术，Dynalog是机器人单元标定技术的世界领导者。它的主流产品DynaCal 系统，被应用于离线的机器人单元校准，并作为最精确的和技术先进的机器人校准程序为许多机器人制造商和终端使用者所接受。AutoCal 系统将已证实的DynaCal校准技术结合到一个在线的全自动系统中，该系统专为程序控制和复原而设计的，价格低廉。